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IPD200N15N3GATMA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 150V 50A TO252-3
- Price
- $2.47
(8013 available)
Bargain Finds
Product Description
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |