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BSM180D12P2C101
- Manufacturer
- ROHM Semiconductor
- Description
- MOSFET 2N-CH 1200V 180A MODULE
- Price
- $410.07
(21 available)
Bargain Finds
Product Description
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | - |
| FET Type | 2 N-Channel (Half Bridge) |
| Packaging | Bulk |
| FET Feature | Silicon Carbide (SiC) |
| Part Status | Active |
| Power - Max | 1130W |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |