RN2713JE(TE85L,F)
RN2713JE(TE85L,F)-imag0

RN2713JE(TE85L,F)

Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.1W ESV
Price
$0.57
(4000 available)

Bargain Finds

Product Description

Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Packaging Cut Tape (CT)
Part Status Active
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Resistor - Base (R1) 47kOhms
Frequency - Transition 200MHz
Supplier Device Package ESV
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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